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Si9910
Vishay Siliconix
Adaptive Power MOSFET Driver 1
FEATURES
D dv/dt and di/dt Control
D Undervoltage Protection
D Short-Circuit Protection
DESCRIPTION
D t rr Shoot-Through Current Limiting
D Low Quiescent Current
D CMOS Compatible Inputs
D Compatible with Wide Range of MOSFET Devices
D Bootstrap and Charge Pump Compatible
(High-Side Drive)
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
FUNCTIONAL BLOCK DIAGRAM
V DS
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t rr (diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in both standard and lead (Pb)-free
8-pin plastic DIP and SOIC packages which are specified to
operate over the industrial temperature range of ? 40 _ C to
85 _ C.
R3
*100 k W
V DD
DRAIN
C1
Undervoltage/
Overcurrent
Protection
PULL-UP
R2
*2 to 5 pF
*250 W
INPUT
2- m s
Delay
PULL-DOWN
I SENSE
R1
*0.1 W
V SS
* Typical Values
1. Patent Number 484116.
Document Number: 70009
S-42043—Rev. H, 15-Nov-04
www.vishay.com
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